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熔体温度的精准测量和合理控制是快速合成化学配比磷化铟(InP)的关键,并直接影响晶体质量。由于单晶炉内温度梯度较大并且熔体表面有一层三氧化二硼覆盖层,测量高温高压单晶炉内熔体温度精度不高,针对这一难题,通过分析热偶位置对其测量结果的影响,修正热偶测量温度与实际熔体温度的偏差,使测控精度由±30℃提高至±5℃。基于熔体温度测量准确度的提高,实验结果表明,在合成过程中随着磷注入量的增加,控制熔体温度从1 110℃逐步降低到接近InP熔点的1 070℃时,合成效果最佳,成功实现2 h可重复合成4.7 kg化学配比的InP。
Accurate measurement and reasonable control of the melt temperature is the key to rapid chemical synthesis of indium phosphide (InP) and has a direct impact on crystal quality. Due to the large temperature gradient in the single crystal furnace and the coating layer with a layer of boron trioxide on the melt surface, the measurement of the melt temperature in the high temperature and high pressure single crystal furnace is not accurate. In view of this problem, by analyzing the position of the thermocouple, The correction of the thermocouple temperature measurement and the actual deviation of the melt temperature, so that measurement and control accuracy from ± 30 ℃ to ± 5 ℃. Based on the improvement of the measurement accuracy of the melt temperature, the experimental results show that the optimal synthesis effect is obtained when the melt temperature is gradually reduced from 1110 ℃ to 1070 ℃ near the melting point of InP with the increase of phosphorus injection amount in the synthesis process , Successfully achieved 2 h can be re-synthesized 4.7 kg chemical ratio of InP.