【摘 要】
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Bandgap engineering of semiconductor nanomaterials is critical for their applications in nanoelectronics, opto-electronics, and photonics. Here we report, for t
【机 构】
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Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electr
论文部分内容阅读
Bandgap engineering of semiconductor nanomaterials is critical for their applications in nanoelectronics, opto-electronics, and photonics. Here we report, for the first time, the growth of single-crystalline quateary alloyed Ga0.75In0.25As0.49Sb0.51 nanowires via a chemical-vapor-deposition method. The synthesized nanowires have a uniform composition distribution along the growth direction, with a zinc-blende structure. In the photoluminescence investigation, these quateary alloyed semiconductor nanowires show a strong band edge light emission at 1950 nm (0.636 eV). Photode-tectors based on these alloy nanowires show a strong light response in the near-infrared region (980 nm) with the exteal quantum efficiency of 2.0 × 104％and the responsivity of 158 A/W. These novel near-infrared photodetectors may find promising applications in integrated infrared photodetection, information communication, and processing.
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