硅微结构中热和机械应力的模拟

• 作 者: Farzad.(?）ourahmadi Phillipw.Barth Kurt Petersen 柯导明
• 机 构: Novasensor 1055 Mission Court,Fremont CA94539(U.S.A.）,Novasensor 1055 Mission Court,Fremont CA94539(
• 出 处: 电子器件
• 发表日期: 1990年03期
• 关键词: 微结构 硅膜 封装过程 有限元方法 薄膜淀积 机械应力 金属线 压力传感器 模拟方法 热应力

在高级硅微结构设计中有一个不可缺少的手段全今还未得到开发,这就是用来模拟复杂多层微结构的有限元方法和数据库.本文报道了一种模拟方法和许多例子.这种方法考虑了热诱导应力和其它一些参数,这些参数精确地预言了薄膜淀积、键合和封装过程.本方讨论了以下几个难题:(a)不同的绝缘体在硅膜片中产生不同的应力,这是一个很重要的问题,因为用作压力传感器的膜片随着技术的进展正变得越来越薄(5μm或更少些).(b)在硅膜片和梁上制作的金属线图案引起的复杂热应力模式.而这些模式除了用有限元计算外,任何方法分析起来都是困难的.

An indispensable tool in the design of advanced silicon microstructures has not been developed until now, and this is the finite element method and database used to simulate complex multi-layer microstructures. A simulation method and many examples are reported. The method takes into account the thermal induced stresses and other parameters that accurately predict the film deposition, bonding, and encapsulation processes.The following topics are discussed: (a) Different insulators produce different Stress is a very important issue because the diaphragm used as a pressure sensor is becoming thinner and thinner (5 μm or less) as the technology advances. (B) Complex patterns of thermal stress caused by patterns of metal lines, which are difficult to analyze in any way except by finite element calculations.