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阐述了应用于EEPROM中的超薄隧道氧化层随时间的击穿特性。比较和分析了不同的可靠性测试方法,并对超薄氧化层生长工艺的优化进行了探讨。
The breakdown characteristics of ultrathin tunnel oxide used in EEPROM over time are described. Different reliability test methods are compared and analyzed, and the optimization of ultra-thin oxide growth process is discussed.