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采用热丝化学气相沉积(HWCVD)方法沉积本征非晶硅薄膜,研究了热丝电流对薄膜结构及其钝化单晶硅片效果的影响。采用光谱型椭偏仪分析了非晶硅薄膜的介电常数虚部ε2和薄膜空位浓度的变化,采用傅里叶红外光谱测试仪分析了膜中Si—HX键,使用硅片的少子寿命表征钝化效果。结果表明:在热丝电流(两根直径为0.5 mm的钽丝的总电流)为20.5~23.5 A时,随着热丝电流增大薄膜中空位浓度逐渐增大,薄膜中氢总含量在热丝电流约22.0 A时出现峰值,而此时薄膜微观结构参数R*最小,钝化效果在约21.5 A处出现峰值,对应的表面复合速率低至2.9 cm/s。
Intrinsic amorphous silicon thin films were deposited by hot filament chemical vapor deposition (HWCVD), and the effects of hot filament current on the structure and passivated single crystal silicon wafers were investigated. The change of the imaginary part ε2 and the vacancy density of the amorphous silicon thin film was analyzed by the spectroscopic ellipsometer. The Si-HX bond in the film was analyzed by Fourier transform infrared spectroscopy Passivation effect. The results show that when the hot wire current (the total current of two tantalum wires with a diameter of 0.5 mm) is 20.5 ~ 23.5 A, with the increase of the hot wire current, the concentration of the vacancy in the film gradually increases and the total hydrogen content in the film increases When the filament current was about 22.0 A, the peak value appeared, and the microstructure parameter R * of the film was the smallest. The passivation effect peaked at about 21.5 A, and the corresponding surface recombination rate was as low as 2.9 cm / s.