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基于Ga N微波功率器件工艺制作了大栅宽Ga N高电子迁移率晶体管(HEMT)管芯,通过负载牵引及建模技术提取了管芯的输入阻抗、输出阻抗。采用二项式多节阻抗匹配变换器实现了宽带功率分配器及合成器电路的制作,通过采用LC网络提升了管芯输入阻抗、输出阻抗,加入了稳定网络,实现了50Ω阻抗匹配。采用高热导率金属陶瓷外壳,提高了器件散热能力。最终研制成功大功率Ga N HEMT内匹配器件,器件采用四胞管芯功率合成技术,总栅宽为40 mm。测试结果表明,频率为4.5~4.8 GHz,脉宽300μs,占空比10%,工作电压VDS为28V,器件的输出功率大于120 W,功率附加效率大于50%,功率增益大于11 d B。
Based on the Ga N microwave power device process, a wide gate wide Ga N high electron mobility transistor (HEMT) die is fabricated, and the input impedance and the output impedance of the die are extracted by load pulling and modeling techniques. Adopting the binomial multi-segment impedance matching converter, the broadband power divider and synthesizer circuit are fabricated. The input impedance and output impedance of the die are improved by using the LC network, and a stable network is added to achieve a 50Ω impedance matching. The use of high thermal conductivity ceramic shell, improve the cooling capacity of the device. The final successful development of high-power Ga N HEMT matching device, the device uses quad cell core power synthesis technology, the total gate width of 40 mm. The test results show that the output power of the device is more than 120W, the power added efficiency is more than 50% and the power gain is more than 11d B. The frequency is 4.5-4.8 GHz, the pulse width is 300μs, the duty cycle is 10%, the operating voltage VDS is 28V.