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通过对溅射过程中辉光放电现象及薄膜沉积速率的研究 ,发现随着氮浓度的增大 ,靶面上形成一层不稳定的AlN层 ,由于AlN的溅射速率远小于Al,从而使薄膜的沉积速率显著下降。同时还研究了其它溅射参数对薄膜沉积速率的影响。结果表明 :随靶基距的增大和靶功率的减小 ,不同程度引起沉积速率的下降 ;随着溅射气压的增大 ,最初沉积速率不断增大 ,当溅射气压增大到一定程度时 ,沉积速率达到最大值 ,之后随溅射气压的增大 ,又不断减小。
Through the study of the glow discharge phenomenon and the film deposition rate during the sputtering process, it is found that with the increase of the nitrogen concentration, an unstable AlN layer is formed on the target surface. Because the sputtering rate of AlN is much smaller than that of Al, The deposition rate of the film is significantly reduced. The effect of other sputtering parameters on the film deposition rate was also studied. The results show that the deposition rate decreases with the increase of target distance and target power, and the initial deposition rate increases with the increase of sputtering pressure. When the sputtering pressure increases to a certain extent , The deposition rate reached the maximum, then with the sputtering pressure increases, but also continue to decrease.