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采用化学浴沉积(CBD)法在FTO(SnO_2:F)/Glass衬底上制备了Cu掺杂的CdS薄膜。用电感耦合等离子体-原子发射光谱(ICP-AES)测得不同Cu掺杂浓度的薄膜中Cu/Cd原子比分别为0.5%、1.5%、5%。分别用X射线衍射(XRD)、扫描电镜(SEM)、光致发光谱(PL)、紫外-可见-近红外反射透射谱对薄膜样品进行表征。研究了Cu掺杂对CdS薄膜的晶体结构,微观形貌以及体内点缺陷的影响。用Cu掺杂的CdS薄膜作为N型层制备CdTe太阳能电池,研究了CdS层中Cu对电池性能的影响。
Cu doped CdS films were prepared on FTO (SnO_2: F) / Glass substrate by chemical bath deposition (CBD) method. The Cu / Cd atomic ratios of the films with different Cu doping concentrations were 0.5%, 1.5% and 5%, respectively, as determined by inductively coupled plasma atomic emission spectrometry (ICP-AES). The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) and ultraviolet-visible-near infrared reflectance spectroscopy. The effects of Cu doping on the crystal structure, microstructure and in-vivo defect of CdS thin films were investigated. The Cu-doped CdS thin film was used as an n-type layer to prepare a CdTe solar cell, and the effect of Cu on the cell performance was studied.