A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation

• 作 者: 徐小波 徐凯选 张鹤鸣 秦珊珊
• 机 构: Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School
• 出 处: Chinese Physics B
• 发表日期: 2011年09期
• 关键词: saturation bipolar collector insulator derivation junction transistor SiGe count

In this paper,we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fabricated on a thin silicon-on-insulator (SOI) with a step-by-step derivation of the model formulation.The collector injection width,the internal base-collector bias,and the hole density at the base-collector junction interface are analysed by considering the unique features of the internal and the external parts of the collector,as they are different from those of a bulk counterpart.

In this paper, we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (SOI) with a step-by-step derivation of the model formulation. The collector injection width, the internal base-collector bias, and the hole density at the base-collector junction interface are analysed by considering the unique features of the internal and the external parts of the collector, as they are from from of a bulk counterpart.