Preparation and thermal-sensitive characteristic of copper doped n-type silicon material

• 作 者: 范艳伟 周步康 王军华 陈朝阳 常爱民
• 机 构: Key Laboratory of Functional Materials and Devices for Special Environments of CAS,Xinjiang Key Labo
• 出 处: Journal of Semiconductors
• 发表日期: 2015年01期
• 关键词: resistivity Figure dopant selecting constantly preparations capture inward have

Copper doped n-type single-crystal silicon materials are prepared by a high temperature diffusion process. The electrical and thermal-sensitive characteristic of materials is investigated under different experimental conditions. The results show that the maximum resistivity of 46.2 cm is obtained when the sample is treated at1200°C for 2 h with the surface concentration of the copper dopant source being 1.83 10 7mol/cm2. The copper doped n-type silicon material presents a negative temperature-sensitive characteristic and the B values are about 3010–4130 K.

The electrical and thermal-sensitive characteristic of materials is investigated under different experimental conditions. The results show that the maximum resistivity of 46.2 cm is obtained when the sample is treated at 1200 ° C for 2 h with the surface concentration of the copper dopant source being 1.83 10 7 mol / cm 2. The copper doped n-type silicon material presents a negative temperature-sensitive characteristic and the B values ​​are about 3010-4130 K.