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基于开展的薄硅片长脉冲激光弯曲成形实验,针对弯曲样品表面产生的滑移线和堆垛层错缺陷,结合实验所用规格硅片弯曲角度不超过35°的现象,运用位错理论分析在弯曲过程中硅晶体产生位错、层错现象的原因以及位错对激光弯曲成形的影响。说明了滑移线主要是位错堆积产生滑移的表现形式,而堆垛层错是位错相互叠加产生的不全位错导致的结果;提出薄硅片弯曲成形受到位错浓度和位错移动速度变化的影响。
Based on the long thin-film laser bending test of thin silicon, aiming at the slip lines and stacking fault defects on the surface of the bent sample, in combination with the phenomenon that the bending angle of the silicon wafer used in the experiment does not exceed 35 °, The causes of dislocations and faults in the silicon crystal during the bending process and the effects of dislocations on the laser bending process. It is shown that the slip line is mainly the manifestation of the slip caused by dislocation accumulation, and the stacking faults are the result of incomplete dislocations caused by the superposition of dislocations. It is proposed that the bending deformation of thin silicon wafer is affected by dislocation concentration and dislocation movement The impact of speed changes.