Influence of O2/Ar ratio on the properties of transparent conductive niobium-doped ZnO films

• 作 者: CAO Feng WANG YiDing LIU KuiXu
• 机 构: StateKeyLaboratoryofIntegratedOptoelectronics
• 出 处: 中国科学通报：英文版
• 发表日期: 2009年13期
• 关键词: ZNO薄膜 透明导电 光学性能 铌掺杂 Hall测量 射频溅射 玻璃基板 薄膜沉积 semiconductors electrical properties
• 基金项目: Supported by the High-Tech Research and Development Program of China （Grant Nos. 2007AA06Z112, 2007AA03Z446）, Research Fund for the Doctoral Program of Higher Education of China （Grant No. 20060183030

Niobium-doped ZnO transparent conductive films are deposited on glass substrates by radio frequency sputtering at 300℃.The influence of O2/Ar ratio on the structural,electrical and optical properties of the as-deposited films is investigated by X-ray diff