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采用直流电弧等离子体喷射CVD法制备出金刚石薄膜,利用扫描电子显微镜(SEM)、Raman光谱及X射线衍射(XRD)等研究基底温度对金刚石厚膜生长特性及内应力的影响。结果表明:950℃基底温度生长的金刚石厚膜结晶性能较好,纯度较高;而850℃和1050℃生长的金刚石厚膜表面呈现大量的孪晶缺陷,结晶度较低,同时出现较多的非金刚石碳,纯度较低。随着基底温度的增加,(111)晶面和(311)晶面的衍射峰强度逐渐增强,(220)晶面的衍射峰强度逐渐降低。850℃和950℃基底温度生长的金刚石厚膜的宏观应力和微观应力都呈现出拉应力,1050℃基底温度生长的金刚石厚膜的宏观应力和微观应力都呈现出压应力。
Diamond films were prepared by DC arc plasma jet CVD. The effects of substrate temperature on the growth characteristics and internal stress of diamond films were investigated by scanning electron microscopy (SEM), Raman spectroscopy and X-ray diffraction (XRD). The results show that the thick diamond films grown at 950 ℃ have better crystallinity and higher purity. However, the diamond films grown at 850 ℃ and 1050 ℃ have a large number of twin defects with low crystallinity and a large number of Non-diamond carbon, low purity. With the increase of substrate temperature, the intensity of the diffraction peak of the (111) crystal plane and the (311) crystal plane gradually increase, and the diffraction peak intensity of the (220) crystal plane decreases gradually. The macroscopic and microscopic stresses of diamond thick films grown at 850 ℃ and 950 ℃ have tensile stresses. The macroscopic and microscopic stresses of diamond thick films grown at 1050 ℃ have shown compressive stress.