论文部分内容阅读
本文提出了一种简单的模型来描述增强型MOS场效应晶体管的阈值和弱反型工作。对照两维数字模拟对这种模型进行了检查,得到了晶体管特性的准确描述。这种模型具有电流和电导的连续性,适合于低电压低功耗CMOS集成电路的计算机辅助设计。
This paper presents a simple model to describe the threshold and weak inversion behavior of an enhancement mode MOS field effect transistor. This model was examined against a two-dimensional digital simulation and an exact description of the transistor characteristics was obtained. This model has current and conductance continuity and is suitable for computer-aided design of low-voltage, low-power CMOS integrated circuits.