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应用Mg离子注入MOCVD法生长掺杂Mg的GaN中 ,在经过 80 0℃ ,1h的退火后 ,获得高空穴载流子浓度 (8 2 8× 10 17cm-3 )的P 型GaN。首次报道了实验上通过Mg离子注入到Mg生长掺杂的GaN中并获得高的表面空穴载流子浓度
Mg-doped GaN was grown by Mg ion implantation and MOCVD. After annealing at 80 ℃ for 1h, P-type GaN with high hole carrier concentration (8 2 8 × 10 17cm-3) was obtained. It was reported for the first time that Mg ions were experimentally implanted into Mg-growth-doped GaN and high surface hole carrier concentration