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讨论了 Co Si2 SALICIDE结构对 CMOS/SOI器件和电路抗γ射线总剂量辐照特性的影响 .通过与多晶硅栅器件对比进行的大量辐照实验表明 ,Co Si2 SALICIDE结构不仅可以降低CMOS/SOI电路的源漏寄生串联电阻和局域互连电阻 ,而且对 SOI器件的抗辐照特性也有明显的改进作用 .与多晶硅栅器件相比 ,采用 Co Si2 SALICIDE结构的器件经过辐照以后 ,器件的阈值电压特性、亚阈值斜率、泄漏电流、环振的门延迟时间等均有明显改善 .由此可见 ,Co Si2SALICIDE技术是抗辐照加固集成电路工艺的理想技术之一 .
The effect of Co Si2 SALICIDE structure on the total dose radiation resistance of CMOS / SOI devices and circuits against the γ-ray was discussed.A large number of irradiation experiments compared with the polysilicon gate devices show that the Co Si2 SALICIDE structure can not only reduce the Source-drain parasitic series resistance and local interconnect resistance, but also significantly improve the anti-radiation properties of SOI devices.Compared with polysilicon gate devices, the devices using Co Si2 SALICIDE structure after irradiation, the device threshold voltage Characteristics, sub-threshold slope, leakage current, ring-gate delay time, etc. It can be seen, Co Si2SALICIDE technology is one of the ideal anti-radiation reinforcement IC technology.