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一、引言 离子注入是大规模集成电路制造中的重要工艺,离子注入及其热退火过程中杂质再分布的模拟,对集成电路的设计和制造有很大指导意义。随着集成电路工艺的不断发展,器件尺寸越来越小,已出现了亚微米器件。因此,一维模型已不能很好描述热退火后离子注入杂质的分布,国外已大量应用二维、三维模型来描述。本文在二维离子注入模拟器FUTIS描述的注入杂质分布基础上,导出了在热退火过程中注入杂质再分布的二维解析解。
I. INTRODUCTION Ion implantation is an important process in the manufacture of large-scale integrated circuits. The simulation of ion redistribution in ion implantation and thermal annealing process has great guiding significance for the design and manufacture of integrated circuits. With the continuous development of integrated circuit technology, device size smaller and smaller, sub-micron devices have emerged. Therefore, the one-dimensional model has not been able to describe the distribution of ion-implanted impurities after thermal annealing. Many foreign countries have applied 2D and 3D models to describe them. Based on the distribution of implanted impurities described by the two-dimensional ion implantation simulator FUTIS, a two-dimensional analytic solution of impurity redistribution during thermal annealing is derived.