POLYMER DIODES MADE OF ION IMPLANTED POLYACETYLENE FILMS

• 作 者: 盛康龙 鲍锦荣 荣廷文 林森浩 王玟珉 万洪和 邹志宜 朱新芳
• 机 构: Shanghai Institute of Nuclear Research. Academia Sinica Shanghai 201800 China,Shanghai Institute of
• 出 处: Nuclear Science and Techniques
• 发表日期: 1990年04期
• 关键词: implanted Rutherford implantation depths desirable dopant redistribution mount i

Polyacetylene films were doped with FeCl3 and implanted with 30 k’eV K+ ions. Physical changes to the films were examined by a series of measurements, which include the four-probe test, infrared ray absorption and 2 MeV He+ particle elastic recoil dettection and Rutherford backscattering. The chemical dopants (Fe+++ and Cl-) were redistributed after the implantation and the different species (K+. Fe+++ and Cl-ions) formed p - n junctions at the implantation depths. The implanted films exhibited desirable Ⅰ-Ⅴ characteristics, with current densities as high as 600 mA/cm- at 3V and back - to - forward ratio of current over 300. The polymer diodes kept their behavior for over 60 days. Discussions on the results were given in detail.

Polymeric films were doped with FeCl3 and implanted with 30 k’eV K + ions. Physical changes to the films were examined by a series of measurements, which include the four-probe test, infrared ray absorption and 2 MeV He + particle elastic recoil dection and Rutherford The chemical dopants (Fe +++ and Cl-) were redistributed after the implantation and the different species (K +. Fe +++ and Cl-ions) formed p - n junctions at the implantation depths. current densities as high as 600 mA / cm-at 3V and back-to-forward ratio of current over 300. The polymer diodes kept their behavior for over 60 days. Discussions on the results were given in detail.