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对Bi2WO6半导体材料进行了改性,利用水热法合成了Gd~(3+)和Dy~(3+)掺杂Bi2WO6光催化剂,并且采用XRD、UV-Vis、FE-SEM等测试手段进行表征,同时以噻吩的正辛烷溶液为模拟汽油研究了稀土掺杂对Bi2WO6的光催化脱硫活性的影响。UV-Vis吸收光谱表明,Gd~(3+)和Dy~(3+)掺杂使Bi2WO6催化剂的吸收向可见光区移动,导致其带隙变窄。光催化脱硫实验表明,Gd~(3+)和Dy~(3+)掺杂Bi2WO6的脱硫活性较纯的Bi2WO6有较大的提高,其中Gd~(3+)掺杂Bi2WO6的脱硫率高达94.5%。
The Bi2WO6 semiconductor materials were modified by the hydrothermal synthesis of Gd ~ (3+) and Dy ~ (3+) doped Bi2WO6 photocatalyst, and characterized by XRD, UV-Vis, FE-SEM and other testing methods , And the effect of rare earth doping on the photocatalytic activity of Bi2WO6 was also studied using n-octane thiophene solution as simulated gasoline. The results of UV-Vis absorption spectra showed that the absorption of Bi2WO6 was shifted to the visible region by the doping of Gd ~ (3+) and Dy ~ (3+), resulting in a narrow bandgap. The results of photocatalytic desulfurization show that the desulfurization activity of Bi2WO6 doped with Gd ~ (3+) and Dy ~ (3+) is higher than pure Bi2WO6, and the desulfurization rate of Gd ~ (3+) doped Bi2WO6 is as high as 94.5 %.