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采用射频磁控溅射法在富氧环境下制备ZnO薄膜,继而结合N离子注入及热退火实现薄膜的N掺杂及p型转变,借助霍尔测试和拉曼光谱研究了N离子注入富氧ZnO薄膜的p型导电及拉曼特性.结果表明,在600C温度下退火120min可获得性能较优的p-ZnO:N薄膜,其空穴浓度约为2.527×10(17)cm(-3).N离子注入ZnO引入了三个附加拉曼振动模,分别位于274.2,506.7和640.4cm(-1).结合电学及拉曼光谱的分析发现,退火过程中施主缺陷与N受主之间的相互作用对p-ZnO的形成产生重要影响.
ZnO thin films were prepared by radio frequency magnetron sputtering in oxygen-enriched environment, followed by N-doping and thermal annealing to achieve N-doping and p-type transformation of the films. The effects of N ion implantation on oxygen enrichment The results show that p-ZnO: N thin films with good properties can be obtained by annealing at 600 C for 120 min, and the hole concentration is about 2.527 × 10 17 cm -3. .N ions implanted with ZnO introduced three additional Raman modes of vibration at 274.2, 506.7 and 640.4 cm (-1) respectively.According to the analysis of electrical and Raman spectra, it was found that there was a significant difference between donor defect and N acceptor in the annealing process The interaction has an important influence on the formation of p-ZnO.