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本文提出一种把源岛状通孔的电镀金属热沉(PHS)结构FET单胞与功率合成、分配电路做在一块基片上,构成单片化准毫米波功率合成型GaAs大功率FET的方案。该方案表明,这种结构的FET,由于每个岛状源电极穿过在极薄GaAs衬底上开凿的通孔与散热电极直接相接,所以每单位栅宽的寄生源电感可做到1.0pH/mm左右,器件热阻也比传统结构的分别降低40％左右,四个栅宽为800μm的FET单胞的功率合成效率也达到80％以上,该单片结构还能有效地控制当频率升高时由并联栅指间相位差而引起增益下降问题。试制的FET在28GHz下,1dB压缩点输出功率为1.1W,线性功率增益为4.0dB,功率与(频率)~2乘积为860W·GHz~2。并且进行了温度循环,通电试验和高温贮存等可靠性试验。其结果证明,试制的器件具有能够适用于实际的准毫米波段通信系统的基本可靠性水平。
In this paper, a scheme of monolithic quasi- millimeter-wave power-synthesizing GaAs high-power FET is proposed, which is to make the unit cell of the island-shaped through-hole plated metal heatsink (PHS) structure FET and the power synthesis and distribution circuit on a substrate . The solution shows that FETs of this structure have parasitic source inductance per unit gate width of 1.0 because each island-shaped source electrode is directly connected to the heat-dissipating electrode through a through-hole cut in an extremely thin GaAs substrate the thermal resistance of the device is also reduced by about 40% compared with the conventional structure respectively, and the power synthesis efficiency of four FET single cells with a gate width of 800 μm is more than 80%. The monolithic structure can effectively control the frequency Raised by the parallel gate fingers caused by the phase difference between the problem of gain reduction. The prototype FET at 28GHz, 1dB compression point output power of 1.1W, linear power gain of 4.0dB, power and (frequency) ~ 2 product of 860W · GHz ~ 2. And carried out temperature cycling, power test and high temperature storage reliability test. The results demonstrate that prototype devices have a basic level of reliability that can be adapted to practical quasi-millimeter band communication systems.