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ZnO是一种性能优异的“低温蓝光工程”宽带隙Ⅱ-Ⅵ族半导体材料,但因本征施主缺陷和施主杂质引起的自补偿效应等使ZnO很难有效地实现n型向p型导电的转变。为此,阐述了ZnO薄膜的p型掺杂机理,介绍了国内外研究者在抑制自补偿、提高受主掺杂元素固溶度及寻求合适的受主掺杂元素等方面p型ZnO薄膜的最新研究进展。研究表明:增加ZnO材料中N原子固溶度的各种办法如施主-受主共掺杂、超声雾化气相淀积及本征ZnO薄膜在NH3气氛下后退火等和选择IB族中的Ag为受主掺杂元素是实现ZnO薄膜p型导电的有效措施。期望通过本综述能为国内ZnO基器件应用的p型ZnO薄膜的制备提供新思路。
ZnO is a kind of excellent “low temperature blue light engineering” wide bandgap II-VI semiconductor material, but it is difficult for ZnO to effectively realize n-type to p-type due to intrinsic donor defects and self-compensation effects caused by donor impurities Conductive transition. In this paper, the p-type doping mechanism of ZnO thin films is expounded, and the researches of p-type ZnO thin films in domestic and abroad are introduced in the aspects of suppressing self-compensation, increasing solid solubility of acceptor doping elements and finding suitable acceptor doping elements The latest research progress. The results show that various methods such as donor-acceptor co-doping, ultrasonic atomization vapor deposition and post-annealing of intrinsic ZnO thin films under NH3 atmosphere, etc., to increase the solubility of N atoms in ZnO materials, and select Ag As the acceptor doping element is to achieve effective p-type ZnO thin film conductivity. It is hoped that this review will provide new ideas for the preparation of p-type ZnO thin films for domestic ZnO-based devices.