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引言近来,出现了一种制造自对准金属—氧化物—半导体(MOS)集成电路的新工艺,该工艺只需要三次掩蔽,应用离子注入工艺来获得自对准栅结构。采用氮化硅膜来消除接触掩蔽以及降低场氧化物顶部至接触区和栅区的高度。这种工艺能制造N沟或P沟MOS集成电路。在N沟MOS集成电路中,应用低阻率P型衬底材料或用离子注入提高场表面浓度能避免场反型的问题。为简单起见,本文叙述制造工艺步骤和P沟MOS集成电路的器件特性。
INTRODUCTION Recently, a new process for fabricating self-aligned metal-oxide-semiconductor (MOS) integrated circuits has emerged that requires only three masks to apply an ion implantation process to achieve a self-aligned gate structure. Silicon nitride films are used to eliminate contact masking and reduce the height of field oxide top to contact and gate regions. This process can create N-channel or P-channel MOS integrated circuits. In N-channel MOS integrated circuits, the problem of field inversion can be avoided by using a low-resistivity P-type substrate material or by ion implantation to increase the field surface concentration. For simplicity, this article describes the manufacturing process steps and device characteristics of a P-channel MOS integrated circuit.