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用苯热合成法分别在２００ ℃、３００ ℃、４００ ℃下制得非晶ＳｉＯｘＣｙＨｚ 膜，在室温下观测到强的紫外光致发光，典型样品的发光强度可与多孔硅相比．实验中发现不同温度下生长的样品，其发光谱中均存在３４０ ｎｍ 发光峰，在４００ ℃生长的样品的发光谱中还出现了３８０ ｎｍ 的伴峰．对Ｘ射线衍射谱，Ｆｏｕｒｉｅｒ 变换红外吸收谱，Ｘ 射线光电子能谱，光致发光谱，及光致发光激发谱的分析表明，３４０ ｎｍ 的发光来源于氧化硅中的缺陷，而３８０ ｎｍ 的发光峰可能与材料中的ＳｉＣ和ＳｉＳｉ 键有关．
The amorphous SiOxCyHz films were prepared at temperatures of 200 ℃, 300 ℃ and 400 ℃ by using the benzene thermal synthesis method respectively. Strong ultraviolet photoluminescence was observed at room temperature. The luminescence intensity of the typical samples was comparable to that of porous silicon. In the experiment, it was found that the samples grown at different temperatures had 340 nm emission peak in the emission spectrum, and the peak of 380 nm appeared in the emission spectrum of the sample grown at 400 ° C. The analysis of X-ray diffraction, Fourier transform infrared absorption, X-ray photoelectron spectroscopy, photoluminescence and photoluminescence spectra showed that the emission at 340 nm was originated from the defect in silicon oxide, while the emission at 380 nm Peaks may be related to Si-C and Si-Si bonds in the material.