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MOVPE生长不掺杂GaAs薄层的线偏振光吸收系数电流感生变化△α的实验结果表明,△α随光波长λ呈脉冲线型非线性变化;注人电流增加,△α明显增大,且△α(λ)谱极大值位置向长波端有一个小移动以至△α(λ)谱线半值全宽也有增宽.λ=900nm处,△α值基本上随电流线性增加.
The experimental results of the change in the linearly polarized light absorption coefficient of the linearly polarized light absorbed by a MOVPE grown undoped GaAs layer show that Δα changes linearly with the pulsed linear variation with the light wavelength λ. The increase of the injected current increases the Δα significantly, And the position of △ α (λ) maxima shifts to a small one at the long wavelength and the full width at half maximum of △ α (λ) also widens. At λ = 900nm, △ α basically increases linearly with current.