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硅中扩散ｐ－ｎ结形成时的“自吸除”效应＝［刊．俄］－１９９３．２２（１）．－２２～２６在半导体基片的非工作区扩散掺杂至接近掺杂元素的极限溶解度。是最为有效的吸除方法之一。以往。人们对这一方法进行了广泛的研究。包括对吸除机理进行了深入仔细的探讨。研究发...
“Self-desorption” effect of diffusion p-n junction formation in silicon = []. Russian] -1993.22 (1). -22 to 26 in the non-working area of the semiconductor substrate is diffusion-doped to the near-doping limit solubility of the element. Is one of the most effective aspiration method. in the past. People have conducted extensive research on this method. Including the absorption mechanism in-depth study. Research hair ...