2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-

• 作 者: 杨成奥 张宇 廖永平 邢军亮 魏思航 张立春 徐应强 倪海桥 牛智川
• 机 构: State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Aca
• 出 处: Chinese Physics B
• 发表日期: 2016年02期
• 关键词: lithography longitudinal shallow waveguide grating alongside Bragg etching fabri

We report a type-I Ga Sb-based laterally coupled distributed-feedback(LC-DFB) laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio(SMSR) as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature(uncoated facet). A low threshold current density of 230 A/cm~2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.

We report a type-I Ga Sb-based laterally coupled distributed-feedback (LC-DFB) laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20 ° C with side mode suppression ratio (SMSR) as high as 24 dB. maximum maximum mode continuous-wave output A low threshold current density of 230 A / cm ~ 2 is achieved with differential quantum efficiency estimated to be 93 mW / A. The laser shows a good wavelength stability against drive current and working temperature.