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在衬底温度为400℃、射频功率为20 W的条件下,通过改变SiH_4和NH_3的体积流量比、电极(圆环和平板电极)和匀气盘结构,采用等离子体增强化学气相沉积(PECVD)法制备出不同成分的氮化硅薄膜,测量了薄膜的淀积速率、残余应力以及在HF溶液和KOH溶液中的腐蚀速率。实验发现:随着SiH_4和NH_3体积流量比的增大,薄膜的淀积速率变大;相同工艺条件下,采用不同结构的电极淀积的氮化硅薄膜在KOH溶液中的腐蚀速率和腐蚀后的表面形貌都没有明显的差异;相同工艺条件下,使用圆环电极淀积的氮化硅薄膜具有较小的残余应力;使用平板电极淀积的氮化硅薄膜在HF溶液(HF和H_2O的体积比为1∶50)和缓冲氢氟酸(BHF)溶液中有更好的耐腐蚀性;匀气盘对淀积的氮化硅薄膜的淀积速率、残余应力、在HF和KOH溶液中的腐蚀速率几乎没有影响。
The plasma-enhanced chemical vapor deposition (PECVD) was performed by changing the volume flow ratio of SiH_4 and NH_3, the electrode (ring and plate electrode) and the plate homogenizer under the conditions of 400 ℃ substrate temperature and 20 W RF power. ) Method was used to prepare silicon nitride films with different composition. The deposition rate, residual stress and corrosion rate in HF solution and KOH solution were measured. The experimental results show that with the increase of SiH 4 and NH 3 volume flow rate, the deposition rate of the thin films becomes larger. Under the same process conditions, the corrosion rate and corrosion of silicon nitride films deposited by different structures of electrodes in KOH solution . The silicon nitride films deposited by the ring electrode have less residual stress under the same process conditions. In the HF solution (HF and H 2 O) Of the volume ratio of 1:50) and buffered hydrofluoric acid (BHF) solution has better corrosion resistance; uniformity of the deposition rate of the silicon nitride film deposition rate, residual stress in HF and KOH solution The corrosion rate in Almost no effect.