论文部分内容阅读
通过将溶胶凝胶法制备的锆钛酸铅(PZT)在非晶态和多晶态进行刻蚀,对比未经刻蚀的PZT性能,研究了集成工艺中湿法刻蚀造成极化和耐久性能退化的机理.PZT的结晶图谱和表面形貌分析发现,湿法刻蚀中产生的非铁电成分由于具有较小的介电常数,降低了铁电材料上分担的有效测试电压,导致刻蚀后PZT极化能力的降低.未刻蚀的PZT翻转1011次后极化值损失约3%,而刻蚀后极化值减小量大于5%.随着尺寸的减小,耐久特性的降低更为明显,100μm×100μm的PZT极化值减小量约为500μm×500μm样品的3倍.高温过程中由于湿法刻蚀而产生的缺陷和空隙在PZT内部重新分布,外加电压下有更多的电子被缺陷和空隙束缚而产生内建电场并钉扎铁电畴,不同器件尺寸的PZT内部缺陷和空隙浓度的变化不同,导致耐久特性随PZT器件尺寸而不同.利用压电特性参数与极化强度的关系,可以解释湿法刻蚀对压电特性造成损伤的原因.
By comparing the non-etched PZT properties of lead zirconate titanate (PZT) prepared by sol-gel method in amorphous and polycrystalline state, we studied the polarization and durability caused by the wet etching in the integrated process The mechanism of performance degradation.PZT crystallization patterns and surface morphology analysis found that the non-ferroelectric components of wet etching due to the smaller dielectric constant, reducing the ferroelectric material sharing on the effective test voltage, resulting in carved After PZT etching, the PZT polarization was reduced by 10%, the loss of PZT was about 3%, and the decrease of polarization after etching was more than 5% .With the decrease of size, Decrease more obviously, the PZT polarization reduction value of 100μm × 100μm is 3 times that of the sample of 500μm × 500μm.The defects and voids caused by the wet etching in the high temperature process are redistributed inside PZT, under the applied voltage More electrons are trapped by defects and voids to create a built-in electric field and pin ferroelectric domains. The internal defects of PZTs and void concentrations vary with device size, resulting in different endurance characteristics with PZT device size. The relationship between polarization and intensity can explain wet etching The reason of damage caused by the electrical characteristics.