硅中硼扩散运动对氧化层错的影响

• 作 者: 鲍希茂 嵇福权 黄信凡
• 机 构: 南京大学物理系,南京大学物理系,南京大学物理系
• 出 处: 半导体学报
• 发表日期: 1980年04期
• 关键词: 氧化层错 扩散运动 失配位错 退火过程 间隙原子 扩散模型 湿氧氧化 退火温度 硅单晶 激活能

本文讨论了硼在硅中的扩散运动对氧化层错生长和收缩动力学的影响.一方面,硼的扩散运动降低氧化层错的激活能,使层错的生长速度增加;另一方面,却又抑制层错的产生和促使层错消失,使氧化层错的密度减小.在推填子扩散模型中,硼原子的扩散增强了过剩硅间隙原子的扩散,从而促进了层错的生长;而硼扩散引入的失配位错,在生长过程中抑制了某些层错的产生;在退火过程中又促使某些层错断裂和消失,从而降低了层错的密度.

In this paper, we discuss the effect of boron diffusion in silicon on the growth and shrinkage kinetics of oxide layers. On the one hand, the diffusion of boron reduces the activation energy of oxide layers and increases the growth rate of layer faults. On the other hand, But also suppresses the formation of faults and the disappearance of faults so that the density of oxide faults is reduced.In the model of push-fill diffusion, the diffusion of boron atoms enhances the diffusion of excess silicon interstitials and promotes the growth of layer faults. Misfit dislocations introduced by boron diffusion can restrain some layer faults during the growth process. Some layer faults are also caused to rupture and disappear during the annealing process, thus reducing the density of layer faults.