【摘 要】
：
A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demon-strated by a modified silicon semiconductor pro
【机 构】
：
State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of
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A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demon-strated by a modified silicon semiconductor processing technique.In this route,multiple ion implantation is utilized to ensure the uniform distribution of the P elements in silicon,and rapid thermal annealing treatment is used to activate the P atoms and reduce damages caused by ion-implantation.The fabricated prototype device exhibits an excellent photoelectric response performance.With a direct current (DC) bias voltage of-2.3 V,the device detectivity to blackbody irradiation is as high as 5 × 1013cm·Hz1/2/W,which corresponds to a device responsivity of nearly 4.6 A/W,showing their potential applications in infrared detection,infrared astrophysics,and extraterrestrial life science.In particular,the developed device preparation process is compatible with that for the CMOS-circuit,which greatly reduces the manufacturing cost.
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