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通过求解泊松方程得到了双栅肖特基势垒MOSFET的解析模型.这个解析模型包括整个沟道的准二维电势分布和适用于短沟双栅肖特基势垒MOSFET的阈值电压模型.数值模拟器ISE DESSIS验证了模型结果.
The analytical model of double-gate Schottky barrier MOSFET is obtained by solving the Poisson’s equation.This analytical model includes the quasi-two-dimensional potential distribution of the entire channel and the threshold voltage model suitable for the short-channel double-gate Schottky barrier MOSFET. The numerical simulator ISE DESSIS validated the model results.