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采用离子注入掺杂技术 ,研究了聚对苯 (PPP)薄膜的离子束效应。当 2 0～ 70 ke V的 Ar+和 N+注入后 ,聚对苯薄膜的电导率随着剂量的增加而迅速增加。当剂量为 1× 10 1 7ions/cm2时 ,电阻率下降 7个数量级。FT- IR光谱图显示了 Ar+注入使聚对苯分子链部分 C- C和 C- H的 σ键断裂 ,从而改善了它的导电性能。通过超高阻测试仪研究了聚对苯薄膜表面电导率与温度的关系 ,从高分子自由体积理论的角度对离子注入聚对苯薄膜离子注入导电机理进行了研究。
Ion implantation doping technique was used to study the ion beam effect of poly-p-phenylene (PPP) films. When 20 ~ 70 ke V Ar + and N + implanted, the conductivity of poly (p-phenylene oxide) films increased rapidly with the increase of dose. When the dose is 1 × 10 17 ions / cm 2, the resistivity decreases by 7 orders of magnitude. The FT-IR spectrum shows that the Ar + implantation cleaves the sigma bonds of the C-and C-C polybenzimidazole moieties, thereby improving their electrical conductivity. The relationship between the surface conductivity and the temperature of poly (p-phenylene oxide) film was studied by ultrahigh resistance tester. The mechanism of ion implantation poly-benzene thin film ion implantation was studied from the perspective of polymer free volume theory.