论文部分内容阅读
采用化学方法腐蚀部分c-面蓝宝石衬底,在腐蚀区域形成一定的图案,利用LP-MOCVD在此经过表面处理的蓝宝石衬底上外延生长GaN薄膜。采用高分辨率双晶X射线衍射(DCXRD)、光致发光光谱(PL)、透射光谱分析GaN薄膜的晶体质量和光学质量。分析结果表明,GaN薄膜透射谱反映出的GaN质量与X射线双晶衍射测量的结果一致,即透射率越大,半高宽越小,结晶质量越好;对蓝宝石衬底进行前处理可以大大改善GaN薄膜的晶体质量和光学质量,其(0002)面及(102)面XRD半高宽(FWHM)分别降低到208.80arcsec及320.76arcsec ,而且其光致发光谱中的黄光带几乎可以忽略。
A portion of the c-plane sapphire substrate is chemically etched to form a pattern in the etched region. A GaN film is epitaxially grown on the surface-treated sapphire substrate by LP-MOCVD. The crystal quality and optical quality of GaN films were analyzed by high resolution double crystal X-ray diffraction (DCXRD), photoluminescence (PL) and transmission spectroscopy. The results show that the transmission spectra of GaN films reflect the GaN quality and the X-ray double-crystal diffraction measurement results are consistent, that is, the greater the transmittance, the smaller the FWHM, the better the crystal quality; pretreatment of the sapphire substrate can be greatly The FWHM of the (0002) plane and the (102) plane of the GaN thin film are reduced to 208.80 arcsec and 320.76 arcsec respectively, and the yellow band in the photoluminescence spectrum is almost the same Can be ignored.