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本文报道了用改进了的 Piper-Polich 法制备 CdTe 晶体的方法以及对晶体完整性的观测和晶体禁带宽度与电学参数的测量结果。这些结果表明,采用这种方法制备Ⅱ—Ⅵ族化合物半导体材料,设备简单,生长温度低,实验条件容易控制,是一种很有应用前途的方法。
In this paper, the methods of preparing CdTe crystals by modified Piper-Polich method, the observation of the crystal integrity and the measurement of the crystal forbidden band width and the electrical parameters are reported. These results show that the preparation of II-VI compound semiconductor material by this method is a promising method with simple equipment, low growth temperature and easy control of experimental conditions.