0.532-μm laser conditioning of HfO_2/SiO_2 third harmonic separator fabricated by electron-beam evap

• 作 者: 李大伟 赵元安 邵建达 范正修 贺洪波
• 机 构: Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences,Shanghai Institute of Op
• 出 处: Chinese Optics Letters
• 发表日期: 2008年05期
• 关键词: conditioning evaporation harmonic limits nodular ultraviolet irradiation transla

The 0.532-μm laser conditioning of HfO_2/SiO_2 third harmonic separator fabricated by electron-beam evaporation (EBE) was studied.The laser induced damage threshold (LIDT) of the separator determined by 1-on-1 test is 9.1 J/cm~2 and it is 15.2 J/cm~2 after laser conditioning determined by raster scanning. Two kinds of damage morphologies,taper pits and flat bottom pits,are found on the sample surface and they show different damage behaviors.The damage onset of taper pits does not change obviously and the laser conditioning effect is contributed to the flat bottom pits,which limits the application of laser conditioning.

The 0.532-μm laser conditioning of HfO_2 / SiO_2 third harmonic separator fabricated by electron-beam evaporation (EBE) was studied. The laser induced damage threshold (LIDT) of the separator determined by 1-on-1 test is 9.1 J / cm ~ 2 and it is 15.2 J / cm ~ 2 after laser cooling determined by raster scanning. Two kinds of damage morphologies, taper pits and flat bottom pits, are found on the sample surface and they show different damage behaviors. The damage onset of taper pits does not change obviously and the laser conditioning effect is contributed to the flat bottom pits, which limits the application of laser conditioning.