论文部分内容阅读
已经制备了使用Cd_XHg_(1-X)Te 晶体工作在77—300°K 温度范围的p-n 结光伏探测器,结是由真空中或汞气氛中热处理p 型样品而制得。本程序使在p 型基底上产生一厚度为几十微米的n 型表面层。在遍及77—350°K 温度范围测定了伏安特性和结电容。回时,对于波长1—15微米在77°K 和300°K 测定了光电压,从已进行的测量发现,对于所研究的探测器,77°K 时最大光电灵敏度和探测率分别为1000伏/瓦和10~9—10~(10)厘米·赫~(1/2)·瓦~(-1)量级。发现光灵敏度极值在1—9微米波长范围内随着结区组分偏离的改变而漂移。
P-n junction photodetectors have been fabricated using Cd_XHg_ (1-X) Te crystals operating in the temperature range of 77-300 ° K with junctions made by heat treating p-type samples in a vacuum or mercury atmosphere. This procedure creates an n-type surface layer on the p-type substrate with a thickness of tens of micrometers. Voltammetry and junction capacitance were measured over the 77-350 ° K temperature range. When returned, the photovoltage was measured at a wavelength of 1-15 microns at 77K and 300K, and from the measurements performed it was found that the maximum photosensitivity and detection at 77K were 1000V / W and 10 ~ 9-10 ~ (10) cm · He ~ (1/2) · W -1. It was found that the extremes of light sensitivity drifted with the deviation of the junction region composition in the 1-9 μm wavelength range.