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本文研究了MOSFET的电离辐照效应,给出了辐照在MOSFET栅介质中引起氧化物电荷对阈电压的贡献与辐照剂量和栅偏置电场的相互依赖关系.结果表明,辐照引起的氧化物电荷与管子的沟道种类无关.另外,漏源电压对MOSFET的辐照响应也有影响.统计数据表明,对管子阈电压漂移有贡献的界面态的能级范围大约为 E_s/2.对实验结果进行了讨论.
In this paper, we study the effect of ionizing radiation on MOSFET, and give the interdependence between the contribution of oxide charge to threshold voltage and the dose of radiation and the gate bias electric field in MOSFET gate dielectric. The results show that the radiation-induced Oxide charge has nothing to do with the channel type of the tube.In addition, the drain-source voltage also affects the radiation response of the MOSFET.The statistical data show that the energy level range of the interface state contributing to the tube threshold voltage drift is about E_s / The experimental results are discussed.