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利用多靶磁控溅射技术在SiO_2/Si基体上沉积Cu/Cu(Ge,Zr)多层薄膜,采用四探针仪(FPPT),X射线衍射仪(XRD),高分辨透射电镜(HRTEM),X射线光电子能谱(XPS)和原位纳米电子束探针能谱(EDS)表征多层薄膜退火前后电阻率、微观结构和界面成分的演变及行为.结果表明,在低温退火阶段(<200℃),Cu(Ge,Zr)膜层中Ge与Cu选择性反应形成低阻Cu_3Ge相,有效抑制Cu与Si的早期扩散;在高温下(>450℃),Zr原子在Cu_3Ge/SiO_2界面析出并与SiO_2层进一步反应形成稳定非晶ZrOx/ZrSiyOx化合物.Cu(Ge,Zr)薄膜中异质原子及与相邻膜层间分步选择性自反应合成高热稳Cu_3Ge/ZrO_x/ZrSi_yO_x复合阻挡层,使Cu/Cu(Ge,Zr)/SiO_2/Si多层膜具有高热稳定性.
Cu / Cu (Ge, Zr) multilayers were deposited on SiO 2 / Si substrates by multi-target magnetron sputtering. The films were characterized by FPPT, XRD and HRTEM ), X-ray photoelectron spectroscopy (XPS) and in-situ electron beam probe EDS (EDS) were used to characterize the evolution and behavior of resistivity, microstructure and interfacial composition before and after annealing of multi-layer thin films.The results show that in the low temperature annealing stage <200 ℃). Ge and Cu selectively react with Cu to form low resistance Cu_3Ge phase in Cu (Ge, Zr) film, which effectively inhibits the early diffusion of Cu and Si. At high temperature (> 450 ℃) ZrO_x / ZrSi_yO_x compound is formed by the selective reaction of heterogeneous atoms in the Cu (Ge, Zr) film and selective self-reaction with adjacent layers Barrier layer to make the Cu / Cu (Ge, Zr) / SiO 2 / Si multilayer film have high thermal stability.