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本文分析了自发发射光谱的峰值、半宽与载流子分布极大值、半宽的关系,研究了抛物-指数带和高斯型杂质带中载流子分布极大值与半宽的变化规律、并计算了不同补偿度下的载流子分布极大值和半宽.分析了各能级间的跃迁特点,计算了整个能量范围内的跃迁矩阵元,计算了导带到价带和导带到杂质带的辐射复合寿命,讨论了使掺Si-GaAs发光二极管响应时间变长的原因.在室温下测量了不同补偿度的掺Si-GaAs发光二极管的稳态和瞬态时间分辨光谱.实验结果与理论计算定性一致.
In this paper, the relationship between the peak and half width of spontaneous emission spectra and the maximum and half width of carrier distribution is analyzed. The variation law of maximum and half width of the distribution of carriers in parabolic-exponential band and Gaussian band , And calculates the maximum and half width of the carrier distribution under different compensation degrees.It analyzes the transition characteristics between different energy levels, calculates the transition matrix elements in the whole energy range, calculates the conduction band to valence band and conduction The reason why the response time of doped Si-GaAs light-emitting diode is longer is discussed, and the steady-state and transient time-resolved spectra of Si-GaAs LEDs with different compensation degrees are measured at room temperature. Experimental results and theoretical calculations are qualitatively consistent.