论文部分内容阅读
采用RF反应磁控溅射在Si(111)基片上制备了多晶AlN薄膜,研究了工作气压对AlN薄膜晶面择优取向的影响。利用台阶仪、X射线衍射(XRD)、红外吸收光谱(FTIR)对AlN薄膜的沉积速率、晶体结构、化学结构及成分进行了表征。结果表明:工作气压对AlN薄膜晶面择优取向具有十分显著的影响,当工作气压低于0.6 Pa时,薄膜呈现(002)晶面择优取向;当气压增加到1 Pa时,AlN薄膜呈现(100),(002)混合晶面取向;当工作气压为1.5 Pa时,(002)晶面衍射峰消失,薄膜呈现(100)晶面择优取向。根据分析结果,提出了工作气压对AlN薄膜择优取向的影响机制,其次,在AlN薄膜的FTIR光谱中,Al-N键振动在波数为678 cm-1处有强烈的吸收峰,Al-N振动吸收峰包含A1(TO)模式以及E1(TO)模式,分别位于612,672cm-1附近,A1(TO)模式与E1(TO)模式振动吸收峰的积分面积之比与AlN薄膜的择优取向有关。结果显示FTIR技术可以作为XRD的补充手段,用于表征多晶AlN薄膜的择优取向。
Polycrystalline AlN thin films were prepared on Si (111) substrates by RF reactive magnetron sputtering. The influence of working pressure on the preferred orientation of AlN thin films was investigated. The deposition rate, crystal structure, chemical structure and composition of AlN thin films were characterized by means of step analyzer, X-ray diffraction (XRD) and infrared absorption spectroscopy (FTIR) The results show that the working pressure has a very significant influence on the preferred orientation of the AlN thin film. When the operating pressure is lower than 0.6 Pa, the (002) plane exhibits the preferred orientation. When the pressure increases to 1 Pa, the AlN film exhibits (100 ) And (002), respectively. When the operating pressure is 1.5 Pa, the diffraction peak of (002) plane disappears and the preferred orientation of (100) plane appears. According to the analysis results, the influence mechanism of working pressure on the preferred orientation of AlN thin films is proposed. Secondly, in the FTIR spectrum of AlN thin films, Al-N vibration has a strong absorption peak at a wave number of 678 cm- The absorption peak contains A1 (TO) mode and E1 (TO) mode at 612, 672 cm-1, respectively. The ratio of the integrated area of the A1 (TO) mode and the E1 (TO) mode vibration absorption peak is related to the preferred orientation of the AlN film. The results show that the FTIR technique can be used as a supplementary means of XRD to characterize the preferred orientation of polycrystalline AlN films.