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在匹配层结构压电换能器的基础上,通过对兆声压电振子的振动模式进行控制,在横向尺度上实现了兆声抛光工具头振动振幅的均匀化,进而开展了有/无兆声作用下硅片的化学机械抛光实验.抛光后,无兆声作用硅片的表面粗糙度Ra均值达到0.072μm,兆声作用硅片的表面粗糙度Ra均值达到0.020μm.测量了被抛光硅片的平面度,相对于无兆声作用硅片的平面度的PV值28μm,兆声作用硅片PV值显著下降,为21μm.可见,相对于传统化学机械抛光,兆声化学机械复合抛光能够有效地改善原有抛光工艺,提高硅片抛光表面质量,实现其抛光均匀性.
On the basis of matched piezoelectric transducers, by controlling the vibration mode of mezzo-acoustic piezoelectric vibrator, the homogenization of vibration amplitudes of mega-acoustic polishing head is achieved at the lateral scale, After the polishing, the average surface roughness Ra of silicon without trombone acoustics reached 0.072μm, the mean roughness of Ra of megasonic silicon wafers reached 0.020μm.The surface roughness of polished silicon The flatness of the wafer, the PV value relative to the planarity of the silicon wafer without mega sound, was 28 μm, and the PV value of the mega-acoustically active silicon wafer was significantly decreased to 21 μm, which shows that the mega chemical mechanical composite polishing can be performed with respect to the conventional chemical mechanical polishing Effectively improve the original polishing process, improve the polished surface quality silicon, to achieve its polishing uniformity.