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长期以来,人们对于硅片在经过HF湿法处理之后出现的水印早已有所认识,尤其是图形包含亲水和疏水层时最为明显。我们系统地研究了经过HF后道处理之缺陷形成的机理,并确认了与先前报道的水印截然不同的缺陷类型。根据X射线和其它分析表明,认为这些缺陷与周围环境残余的汽相HF和随后的晶圆表面反应有关。根据反应腔室HF浓度的不同可以产生不同类型的缺陷。由于水印是由硅在水中的氧化和随后产生的氧化物的分解形成的,少量的HF具有加速这个过程的效果。形成不同缺陷的条件,还有避免这些缺陷的策略均得以认定。正确的排空管理是一个关键的因素。最后发现,重参杂的硅更易产生缺陷。
Watermarks have long been recognized for silicon wafers that have been wet-processed by HF, most notably when the pattern contains hydrophilic and hydrophobic layers. We systematically studied the mechanism of defect formation after HF post-treatment and confirmed the type of defects that were distinct from the previously reported watermarks. X-ray and other analyzes indicate that these defects are believed to be related to the residual vapor phase HF and subsequent wafer surface reactions in the surrounding environment. Depending on the concentration of the reaction chamber HF, different types of defects can be produced. Since watermarks are formed by the oxidation of silicon in water and subsequent decomposition of oxides, a small amount of HF has the effect of accelerating this process. Conditions to form different defects, as well as strategies to avoid these deficiencies have been identified. Correct discharge management is a key factor. Finally found that heavy miscellaneous silicon more prone to defects.