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不同晶面单晶硅的物理性能和化学性能的微小差异会对微纳加工结果产生明显影响。利用电子背散射衍射(EBSD)技术,研究了不同晶面单晶硅在飞秒激光作用下的行为特性。结果表明,(111)面单晶硅在飞秒激光能量密度低于和高于破坏阈值时分别形成非晶区和刻蚀区,而(100)面单晶硅在不同能量飞秒激光的作用下只形成刻蚀区。飞秒激光在微纳加工领域得到广泛应用,对晶体材料的不同晶面在飞秒激光作用下的行为特性的研究有助于制造新型微纳器件。
The slight differences in the physical and chemical properties of different single crystal silicon surfaces can have a significant impact on the micro / nano fabrication results. The electron backscatter diffraction (EBSD) technique was used to study the behavior of monocrystalline silicon with different crystal planes under femtosecond laser. The results show that (111) monocrystalline silicon forms amorphous regions and etched regions respectively at femtosecond laser energy densities below and above the failure threshold, while the effect of (100) plane monocrystalline silicon at different energy femtosecond lasers Only under the formation of etching area. Femtosecond laser has been widely used in the field of micro / nano processing. The research on the behavior of different crystal planes under the action of femtosecond laser is helpful for the fabrication of new micro / nano devices.