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采用磁控溅射和光刻技术制备了1μm×1μm的Ti N/Hf O2/ITO(氧化铟锡)3层结构的器件,通过控制改变正负细丝形成(forming)电压的操作方式来研究其阻变性能。研究结果表明,在上述的两种操作模式下,当保持操作端不变时导电细丝的形成与断裂均发生在ITO端操作,且从电流-电压(I-V)循环曲线中均发现了器件具有自限流特性。同时,文中比较了氧化铟锡(ITO)和铂(Pt)两种电极下,存储器单元阻变性能的差别。结合电流-电压循环曲线的拟合机制,推断出自限流特性来源于氧化铟锡(ITO)电极与氧化铪基阻变层之间形成的界面层。进一步设计了基于氧化铟锡(ITO)电极下的氧化硅/氧化铪双层结构阻变层的器件,发现该器件仍具有自限流效应。而且,氧化硅层同样起到了降低操作电流的作用,故使得器件的功耗大幅度降低至16μW。
A 1μm × 1μm TiN / Hf O2 / ITO (indium tin oxide) 3-layer structure was fabricated by magnetron sputtering and photolithography technology. By controlling the operation of changing the forming voltage of positive and negative filaments Its resistance to change performance. The results show that during the above two operating modes, the formation and the fracture of the conductive filaments occur at the ITO terminal while keeping the operating terminal unchanged, and the device has been found from the current-voltage (IV) Self-limiting current characteristics. At the same time, the paper compares the resistance performance of memory cells under the two electrodes of indium tin oxide (ITO) and platinum (Pt). Combined with the fitting mechanism of the current-voltage cycling curve, it is inferred that the self-current-limiting characteristic originates from the interface layer formed between the indium tin oxide (ITO) electrode and the hafnium oxide-based resistive layer. A device based on a silicon oxide / hafnium oxide double-layer resistive layer under the indium tin oxide (ITO) electrode was further designed and found to have the self-limiting effect. Moreover, the silicon oxide layer also plays a role in reducing the operating current, so that the power consumption of the device is drastically reduced to 16μW.