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A scalable large-signal model of AlGa N/Ga N High electron mobility transistors(HEMTs)suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current(Ids) formulation with a geometry-dependent thermal resistance(Rth) and charge-trapping modification.The Idsmodel is capable of accurately modeling the highorder transconductance(gm),which is significant for the prediction of multi-harmonic characteristics.The thermal resistance is identified by the electro-thermal Finite element method(FEM) simulations,which are physically and easily scalable with the finger numbers,unit gate width and power dissipations of the device.Accurate predictions of the quiescent currents,S-parameters up to 40 GHz,and large-signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.
A scalable large-signal model of AlGa N / Ga N High electron mobility transistors (HEMTs) suitable for multi-harmonic characterizations is presented. This model is fulfilled utilizing an improved drain-source current (Ids) formulation with a geometry-dependent thermal resistance (Rth) and charge-trapping modification. The Idsmodel is capable of accurately modeling the highorder transconductance (gm), which is significant for the prediction of multi-harmonic characteristics. The thermal resistance is identified by the electro-thermal Finite element method ) simulations, which are physically and easily scalable with the finger numbers, unit gate width and power dissipations of the device. Accurate predictions of the quiescent currents, S-parameters up to 40 GHz, and large-signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.