论文部分内容阅读
利用平面磁控反应溅射在具有透明导电膜的玻璃基片上沉积氧化钨膜层。Ｘ射线衍射分析结果表明，基片在室温状态下得到的膜呈非晶态。以０．２Ｎ浓度的ＨＣｌ为电解液，用电化学方法研究了Ｈ＋注入及抽出后氧化钨膜光学性能的变化及这种变化与膜的制备参数之间的关系。获得了沉积氧化钨膜近于最佳的工艺条件。在纯氧气氛下，溅射功率密度１．２Ｗ／ｃｍ２，溅射气体压强１．３Ｐａ时，制备的非晶态氧化钨膜，在５０次电化学循环后，漂白态与着色态的可见光透射率之差约为０．５７，其电化学循环的变色寿命也长。光电子能谱（ＸＰＳ）分析表明，Ｈ＋注入后着色态膜内出现了Ｗ５＋、Ｗ４＋。对电致变色机理也作了讨论。
A tungsten oxide film was deposited on a glass substrate having a transparent conductive film by planar magnetron reactive sputtering. X-ray diffraction analysis showed that the film obtained at room temperature was amorphous. Using 0.2N HCl as electrolyte, the changes of optical properties of tungsten oxide films after H + implantation and extraction were studied electrochemically and the relationship between these changes and the fabrication parameters of the films was investigated. Deposition of tungsten oxide film obtained near the best process conditions. In a pure oxygen atmosphere, the sputtering power density of 1.2W / cm2, the sputtering gas pressure of 1.3Pa prepared amorphous tungsten oxide film after 50 cycles of electrochemical bleaching and colored visible light transmission The difference of about 0.57, the electrochemical cycle of color life is also long. Photoelectron spectroscopy (XPS) analysis showed that W5 + and W4 + appeared in the colored film after H + implantation. Electrochromic mechanism is also discussed.