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随着半导体技术的发展,晶休三极管的最大耗散功率也在不断提高。上千瓦,上百安的管子已经问世。使用大功率晶体管制作的设备功率可以高达几十千瓦,甚至更高。但是,大功率晶体管比起电子管来最大的弱点就是极易损坏。损坏的原因大致有如下几点:一、过电压击穿,特别是二次击穿;二、过电流热击穿;三、过功耗损坏。在通常的电路中多采用过压和过流的方式来对晶体管进行保护,这些方法都是行之有效的;但有时在使用中也经常发生电路中的电流和电压都没有超过管子的额定值而管子却损坏
With the development of semiconductor technology, the maximum power dissipation of the crystal break transistor is also rising. On the kilowatts, hundreds of tubes have come out. The power of devices made with high-power transistors can be as high as tens of kilowatts or more. However, the biggest weakness of high-power transistors compared to the tube is easily damaged. The causes of damage are roughly the following points: First, over-voltage breakdown, especially the second breakdown; Second, over-current thermal breakdown; Third, over-power damage. Transistors and overcurrent are often used to protect the transistors in common circuits. All of these methods are effective; however, it is often the case that the current and voltage in the circuit do not exceed the rated value of the tube The tube is damaged