,A New silicon-on-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce

• 作 者: LIN Qing ZHANG Zheng-Xuan ZHU Ming XIE Xin-Yun SONG Hua-Qing LIN Cheng-Lu
• 机 构: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and
• 出 处: 中国物理快报（英文版）
• 发表日期: 2003年1期

A new silicon-on-insulator (SOI) device structure is proposed. This new design provides a new path to reduce the temperature of the channel of SOI metal-oxide-semiconductor Geld effect transistor (MOSFET). The device has been verified in two-dimensional device simulation. The new structure reduces the self-heating effect of SOI MOSFET and decreases the negative differential transconductance.