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采用射频(RF)磁控溅射工艺于玻璃衬底沉积了镓钛共掺杂氧化锌(GZO:Ti)半导体薄膜,研究了沉积温度对薄膜微观结构和光学性质的影响。通过X射线衍射仪(XRD)和紫外分光光度计对其晶体结构和透射光谱特性进行表征,同时利用光谱拟合法获取了薄膜的光学常数。研究结果表明,所有薄膜均具备六角纤锌矿结构和c轴择优取向特性,沉积温度对薄膜的微结构参数、光学常数和光学带隙具有明显调控作用,当沉积温度为653K时,GZO:Ti薄膜的晶粒尺寸最大(82.12nm)、位错密度最低(1.48×10~(-4) nm~(-2))、微应变最小(0.001 4)、可见光区平均透射率最高(82.06%)及光学带隙值最大(3.57eV)。
The GZO: Ti semiconductor films were deposited on a glass substrate by radio frequency (RF) magnetron sputtering. The effects of deposition temperature on the microstructure and optical properties of the films were investigated. The crystal structure and transmission spectra were characterized by X-ray diffraction (XRD) and ultraviolet spectrophotometer, and the optical constants of the films were obtained by spectral fitting. The results show that all the films have hexagonal wurtzite structure and c-axis preferred orientation. The deposition temperature has a significant regulation on the microstructure parameters, optical constants and optical band gap of the films. When the deposition temperature is 653K, the deposition temperature of GZO: Ti The film has the largest grain size (82.12nm), the lowest dislocation density (1.48 × 10 ~ (-4) nm ~ (-2)), the smallest strain (0.001 4) and the highest average transmittance in the visible region And optical band gap maximum (3.57eV).